August 3-5, 2020
University of Notre Dame

The Lester Eastman Conference on High Performance Devices is a biennial conference that has its origins over 50 years ago. In 1967, Professor Eastman originated the biennial IEEE-Cornell Conference in Microwave Semiconductors, which then became the IEEE-Cornell Conference on High Performance Devices. It was officially renamed in 2002 as the Lester Eastman Conference on High Performance Devices. Some of the legendary contributions from the Eastman group include high quality GaAs epitaxy, delta-doping, the first lattice-matched InGaAs channel HEMT, T-gate, ballistic devices and polarization effects in GaN.

Topical areas covered in the conference include:

  • High frequency devices: RF, microwave, and millimeter-wave transistors, diodes and detectors, and other high-frequency concepts; novel device technologies for improved performance (electrical, thermal, etc.)
  • Power switching and energy-efficient devices: high power and high voltage transistors, diodes, and other components for power conversion and control applications, including advanced processing and device design
  • Optoelectronic devices: optical emitters for communication and sensing, LEDs for solid state lighting and communication, UV LEDs detectors, lasers, high-efficiency photovoltaics and photo detectors, and other optoelectronic device concepts
  • High performance devices in III-Vs and emerging materials: new materials and phenomena, concepts for next-generation logic devices, and other devices such as bioelectronics, chemical/biological sensors, MEMs devices/systems etc.